Ultrathin Si3N4 Films Deposited From Dichlorosilane For Gate Dielectrics Using Single-Wafer Hot-Wall Rapid Thermal CVD

Abstract

AbstractUsing a hot-wall rapid thermal system which permits single-wafer processing, thin gate dielectrics consisting of silicon nitride films were fabricated by low pressure chemical vapor deposition (LPCVD). Nitride layers deposited from dichlorosilane (DCS) and ammonia exhibited greatly reduced electrical leakage current compared to silane-based nitride films which are conventionally used in lamp-based single-wafer rapid thermal technology. After a postdeposition anneal, the DCS-based gate dielectric films showed better diffusion barrier properties against boron penetration than silane-based gate dielectrics at a dopant activation temperature of 1000°C.