Stacked high-ε gate dielectric for gigascale integration of metal–oxide–semiconductor technologies
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121473
Reference19 articles.
1. A Two-Step, Lightly Nitrided Gate Oxidation Process For Sub-0.5 μm Cmos Technology
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3. Reduction of current leakage in chemical-vapor deposited Ta2O5 thin-films by oxygen-radical annealing [DRAM dielectric]
4. Leakage current reduction in chemical-vapor-deposited Ta2O5 films by rapid thermal annealing in N2O
5. High voltage thin film transistors manufactured with photolithography and with Ta2O5 as the gate oxide
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