Modelling of Hg(3P1) Photosensitization of SiH4 and Surface Reactions of the SiH3 Radical

Abstract

AbstractWe present an experimental study and modelling of gas phase and surface processes involved in mercury-sensitized decomposition of SiH4, leading to hydrogenated amorphous silicon (a-Si:H) film deposition in a parallel plate reactor. The total surface reaction proabability β and the sticking probability s of SiH3 on a growing a-Si:H film are determined in the 40° – 350°C temperature domain. At 100°C β ≈ 0.1 ± 0.01 whereas s ≈ β/4 which reveals an intense radical recombination on the surface. Both β and s increase as a function of temperature. At 350°C β reaches 0.21±0.01. These results are interpreted by a precursor state model for SiH3 adsorption.