Author:
Wong Catherine Y.,Ning Tak H.
Abstract
AbstractPolysilicon is a key material widely used in MOSFET, bipolar, and BICMOS devices. As these technologies evolve into the deep submicron regime, several issues emerge in the applications of polysilicon that must be addressed. In sub-0.5µm MOSFET, fabrication and reliability of n + poly for NMOS and p + poly for PMOS should be studied. In bipolar technology, scaling limits of polysilicon emitter must be investigated. Understanding polysilicon, both in terms of its basic material and process characteristics and its characteristics in specific integrated process and/or integrated device structures, is definitely required in order to realize the full potential of ULSI technologies.
Publisher
Springer Science and Business Media LLC
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