Electron Bean Induced Defects in Silicon/Indium Oxide Heterojunctions and Interfacial Reactions During Annealing

Abstract

ABSTRACTSi/In203 diodes have been prepared by e-beam evaporation of In203 tablets. Annealing of these devices was carried out in N2 and H2 /N2 mixture at 1 atm. in the temperature range of 400–800°C. Experimental data indicated a large increase in the Schottky barrier height and growth of interfacial oxide during annealing. The interface state density was reduced by a factor of 2, but the results indicated the increase in the barrier height to be mainly due to reduction of positive fixed charge density.