Schottky barrier height variation with metallurgical reactions in aluminum-titanium-gallium arsenide contacts
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference13 articles.
1. Metal-semiconductor Contacts;Rhoderick,1978
2. n-GaAs Schottky diodes metallized with Ti and Pt/Ti
3. Thermal reaction of Ti evaporated on GaAs
4. Effect of annealing on the Richardson constant of Al-GaAs Schottky diodes
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1. Reliability improvement of Al-gate power GaAs-MESFET;Electronics and Communications in Japan (Part II: Electronics);2000
2. High-temperature performance of GaAs-based HFET structure containing LT-AlGaAs and LT-GaAs;IEEE Electron Device Letters;1998-07
3. Failure mechanisms of Schottky gate contact degradation and deep traps creation in AlGaAs/InGaAs PM-HEMTs submitted to accelerated life tests;Microelectronics Reliability;1998-06
4. INTRODUCTORY INVITED PAPERFailure mechanisms due to metallurgical interactions in commercially available AlGaAs/GaAs and AlGaAs/InGaAs HEMTs;Microelectronics Reliability;1998-04
5. Thermal Stability in Al/Ti/GaAs Schottky Barrier;Japanese Journal of Applied Physics;1995-07-01
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