Intrinsically low-resistance carbon nanotube-metal contacts mediated by topological defects
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science
Link
http://link.springer.com/content/pdf/10.1557/mrc.2012.14.pdf
Reference25 articles.
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3. A. Javey, J. Guo, Q. Wang, M. Lundstrom, and H. Dai: Ballistic carbon nanotube field-effect transistors. Nature 424, 654 (2003).
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5. J. Svensson and E.E.B. Campbell: Schottky barriers in carbon nanotubemetal contacts. J. Appl. Phys. 110, 111101 (2011).
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