Performance Degradation in Graphene–ZnO Barristors Due to Graphene Edge Contact-Reference-Cited by-同舟云学术

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Performance Degradation in Graphene–ZnO Barristors Due to Graphene Edge Contact

Published:2020-06-02 Issue:25 Volume:12 Page:28768-28774
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Kim So-Young,Ryou Junga¹,Kim Min Jae,Kim Kiyung,Lee Yongsu,Kim Seung-Mo,Hwang Hyeon Jun,Kim Yong-Hoon¹²^ORCID,Lee Byoung Hun^ORCID

Affiliation:

1. Graduate School of Energy, Environment, Water, and Sustainability, School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Korea

2. School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Korea

Funder

Ministry of Science, ICT and Future Planning

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.0c04325

Reference19 articles.

1. Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier

2. Tunable Graphene-GaSe Dual Heterojunction Device

3. Improved Transfer of Graphene for Gated Schottky-Junction, Vertical, Organic, Field-Effect Transistors

4. A graphene barristor using nitrogen profile controlled ZnO Schottky contacts

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