Vacancy Promoted Interdiffusion in Quantum Wells and Applications to Optoelectronic Devices-Reference-Cited by-同舟云学术

Vacancy Promoted Interdiffusion in Quantum Wells and Applications to Optoelectronic Devices

Published:1992 Issue: Volume:262 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Ghisoni M.,Rivers A. W.,Lee K.,Parry G.,Zhang X.,Staton-Bevan A.,Pate M.,Hill G.,Button C.,Roberts J. S.

Abstract

ABSTRACTIn this paper we shall look at a technique, known as impurity free vacancy diffusion (IFVD) for selectively altering the optoelectronic response of quantum well material after growth with a view to monolithic device integration. We will discuss the mechanism, practical considerations and some possible applications.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

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2. Process parameter dependence of impurity-free interdiffusion in GaAs/AlxGa1−xAs and InxGa1−yAs/GaAs multiple quantum wells;Journal of Electronic Materials;1995-07

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4. An optical study of encapsulant thickness-controlled interdiffusion of asymmetric GaAs quantum well material;Semiconductor Science and Technology;1993-10-01

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