An optical study of encapsulant thickness-controlled interdiffusion of asymmetric GaAs quantum well material-Reference-Cited by-同舟云学术

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An optical study of encapsulant thickness-controlled interdiffusion of asymmetric GaAs quantum well material

Published:1993-10-01 Issue:10 Volume:8 Page:1791-1796
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Ghisoni M,Murray R,Rivers A W,Pate M,Hill G,Woodbridge K,Parry G

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/8/i=10/a=001/pdf

Reference38 articles.

1. Low noise characteristics of a GaAs-AlGaAs multiple-quantum-well semiconductor laser amplifier

2. Multiple quantum well (MQW) waveguide modulators

3. Low-voltage multiple quantum well reflection modulator with on:off ratio > 100:1

4. Planar, compatible OEIC's based on multiquantum well structures

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Integration of photonics devices by using quantum well intermixing;SPIE Proceedings;1999-04-28

2. A theoretical analysis of quantum-wire fabrication by vacancy-enhanced interdiffusion of quantum wells;IEEE Journal of Selected Topics in Quantum Electronics;1998

3. Composition and confinement energies of interdiffused AlGaAs/GaAs single quantum well structures;Semiconductor Science and Technology;1997-07-01

4. Fabrication of multiple wavelength lasers in GaAs-AlGaAs structures using a one-step spatially controlled quantum-well intermixing technique;IEEE Photonics Technology Letters;1995-09

5. Uniform intermixing of quantum wells in p-i-n modulator structures by impurity free vacancy diffusion;Journal of Electronic Materials;1995-03

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