Ito/A-Si:H Schottky Photodiode With Low Leakage Current And High Stability

Abstract

ABSTRACTWe report the design, fabrication, and characterization of an indium tin oxide/hydrogenated amorphous silicon (ITO/a-Si:H) Schottky photodiode based on room temperature deposition of ITO. The optical transmittance of the ITO is larger than 80% in the visible light range and its resistivity is less than 6 x 10-4 Ω-cm. The fabricated photodiode exhibits low leakage current and stable I-V characteristics. The leakage current is 7x10-10 A/cm2when biased at -2 V and the shift in leakage current stabilizes to a value less than 9% after 2 seconds of biasing at -2 V. The improvement in performance can be attributed to the high integrity ITO/a-Si:H interface achieved with the low temperature deposition.