Author:
Williams J. S.,Elliman R. G.,Johnson S. T.,Sengupta D. K.,Zemanski J. M.
Abstract
ABSTRACTElevated temperature ion bombardment of GaAs has been examined to investigate the nature of residual damage and the interplay between bombardment-induced defect production and dynamic annealing. The nature of disorder is found to depend strongly on ion energy, species, dose, dose rate and substrate temperature. A temperature regime is identified in which dynamic annealing leads both to the efficient formation of band gap traps for carrier removal and to the low temperature crystallization of pre-existing amorphous layers.
Publisher
Springer Science and Business Media LLC
Reference13 articles.
1. [6] Chin P. K. , Short K. T. and Pearton S. J. , Appl. Phys. Lett. (in press).
2. Transient Annealing of Ion Implanted Gallium Arsenide
3. [9] Johnson S. T. , Williams J. S. , Nygren E. and Elliman R. G. , J. Appl. Phys. in press (1988).
4. Ion Beam Induced Regrowth in GaAs
5. Proton, deuteron, and helium implantation into GaAs and LiNbO3for waveguide fabrication
Cited by
6 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献