Pzt Thin Films on a Lead Titanate Interlayer Prepared by rf Magnetron Sputering

Abstract

AbstractFerroelectric lead zirconate titanate (PZT) films with a composition near the morphotropic phase boundary have been deposited by if magnetron sputtering on a Si substrate coated with silicon oxide, titanium, and platinum (Si/SiO2/Ti/Pt). Substrate temperature and oxygen partial pressure were changed during deposition to prepare films with controlled stoichiometry and perovskite structure. The effects of lead titanate (PT) as a buffer layer were investigated. Thin films of PT/PZT have a dielectric constant of 800 with a dissipation factor of 0.04 at 1 kHz. The remnant polarization of 8μC/cm2 and the coercive field of 50 kV/cm were measured. The effect of processing on the formation of perovskite phase and the electrical properties will be discussed.