Process optimization and characterization of device worthy sol-gel based PZT for ferroelectric memories-Reference-Cited by-同舟云学术

Process optimization and characterization of device worthy sol-gel based PZT for ferroelectric memories

Published:1990-12 Issue:1 Volume:112 Page:329-351
ISSN:0015-0193
Container-title:Ferroelectrics
language:en
Short-container-title:Ferroelectrics

Author:

Melnick B. M.,Cuchiaro J. D.,Mcmillian L. D.,de Araujo C. A. Paz,Scott J. F.

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://www.tandfonline.com/doi/pdf/10.1080/00150199008008237

Reference29 articles.

1. Dey, S. K. and Zuleeg, R. Processing and Parameters of Sol-Gel PZT Thin-Films for GaAs Memory Applications. Proceedings of The First Symposium on Integrated Ferroelectrics. pp.189–194.

2. Wu, E. T., Chen, C. J., Xu, Y. H., Chen, K. C. and Mackenzie, J. D. Sol-Gel Derived Ferroelectric PZT Thin Film on Silicon and Glass Substrate. The Seventh International Meeting on Ferroelectricity Saarbrucken. Germany. pp.437

3. Sol-gel routes leading to nasicon ceramics

4. Mehrotra, Ram C. Polymetallic Alkocides-Precursors for Ceramics. Materials Research Society Symposium Proceedings. pp.81

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