Author:
Meyer F.,Aubry V.,Warren P.,Dutartre D.
Abstract
ABSTRACTThe Schottky barrier height of W on Si1-xGex/ Si has been investigated as a function of composition and strain retained in the alloy for a given composition. The barrier height to ntype films does not vary significantly while that to p-type films follows the same trends than the band gap: it decreases with x and the strain. These results suggest that the Fermi level at the interface is pinned relative to the conduction band.
Publisher
Springer Science and Business Media LLC
Cited by
4 articles.
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