High-resolution transmission electron microscopy (HRTEM) observation of dislocation structures in AlN thin films-Reference-Cited by-同舟云学术

High-resolution transmission electron microscopy (HRTEM) observation of dislocation structures in AlN thin films

Published:2008-08 Issue:8 Volume:23 Page:2188-2194
ISSN:0884-2914
Container-title:Journal of Materials Research
language:en
Short-container-title:J. Mater. Res.

Author:

Tokumoto Yuki,Shibata Naoya,Mizoguchi Teruyasu,Sugiyama Masakazu,Shimogaki Yukihiro,Yang Jung-Seung,Yamamoto Takahisa,Ikuhara Yuichi

Abstract

The structure and configuration of threading dislocations (TDs) in AlN films grown on (0001) sapphire by metal–organic vapor phase epitaxy (MOVPE) were characterized by high-resolution transmission electron microscopy (HRTEM). It was found that the TDs formed in the films were mainly the perfect edge dislocations with the Burgers vector of b = ⅓〈11¯20〉. The majority of the edge TDs were not randomly formed but densely arranged in lines. The arrays of the edge TDs were mainly observed on the {11¯20} and {10¯10} planes. These two planes showed different configurations of TDs. TD arrays on both of these planes constituted low-angle boundaries. We suggest that these TDs are introduced to compensate for slight misorientations between the subgrains during the film growth.

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

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