Effect of long anneals on the densities of threading dislocations in GaN films grown by metal-organic chemical vapor deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
2. InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices
3. Defect structure of metal‐organic chemical vapor deposition‐grown epitaxial (0001) GaN/Al2O3
4. Scattering of electrons at threading dislocations in GaN
5. Growth defects in GaN films on sapphire: The probable origin of threading dislocations
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2. Stress relaxation of three dimensional textured AlN films on sapphire substrate by rapid thermal annealing;Diamond and Related Materials;2021-10
3. Effect of annealing atmosphere (CO and N2 gas flow) on surface morphology and crystal quality of AlN buffer layer;Ceramics International;2020-06
4. Dislocation density investigation on MOCVD-grown GaN epitaxial layers using wet and dry defect selective etching;Applied Physics A;2016-05-24
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