Author:
McKernan S.,De Cooman B. C.,Carter C. B.,Bour D. P.,Shealy J. R.
Abstract
Gax In1 − x Pepilayers grown under a range of growth conditions by organometallic vapor phase epitaxy (OMVPE) on GaAs substrates have been studied in the electron microscope. The results show the presence of an ordering of the group III sublattice parallel to some of the {111} planes. Dark-field images directly reveal ordered domains of different orientations that appear not to be perfect, but contain many planar defects parallel to the growth surface.
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
52 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献