Comparison of Growth Morphology in Ge (001) Homoepitaxy Using Pulsed Laser Deposition and MBE

Abstract

ABSTRACTDifferences in the homoepitaxy of Ge(001) are explored using a dual MBE/PLD deposition system. With identical substrate preparation, temperature calibration, background pressure and analysis, the system provides a unique comparison of the processes arising only from kinetic differences in the flux and at the surface. All films show mounded growth. At substrate temperatures below 200°C, PLD films are smoother than MBE films, whereas they are similar at higher temperatures.