Etitanium Nitride Barrier Metallization Techniques for ULSI Semiconductor Devices

Abstract

ABSTRACTHigh quality barriers of sputter deposited titanium nitride (TiN) are critical elements of advanced ULSI integrated circuits. We have examined the effect of eight variables on eight parameters which may affect device characteristics and the ability to incorporate TiN into the production process. We will discuss the interaction of the variables with the properties of the deposited TiN and indicate in particular the combination of variables which lead to optimum barrier properties.