Recent Progress of Alloyed Ohmic Contacts to GaAs Compound Semiconductors

Abstract

ABSTRACTLow resistance, alloyed AuGeNi Ohmic contacts have been extensively used in the current manufacturing GaAs devices. However, extension of usage of these devices to Very Large Scale Integration levels requires the contacts with excellent thermal stability, shallow diffusion depth, and smooth contact surface in addition to low contact resistance. In the present paper recent studies for development of “non-gold” Ohmic contacts which improve the poor contact properties of the alloyed Ohmic contacts are rev i ewed.