Combined Tripod Polishing and Fib Method for Preparing Semiconductor Plan View Specimens

Author:

Anderson Ron,Klepeis Stanley J.

Abstract

AbstractCombining substantial pre-thinning of semiconductor device specimens via tripod polishing, followed by multiple, selective material removal steps with a focussed ion beam (FIB) tool, offers some unique possibilities with regard to preparing plan-view specimens at precise locations in the material below, and in the interconnect layers above, the semiconductor surface. Extension of these methods to other types of specimens in different configurations allows for the fabrication of multiple specimens on the same TEM grid that may not be possible by any other means.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference4 articles.

1. [3] Hauffe W. , Proceedings EUREM, Budapest, 1984.

2. [2] Kirk E. J. , et al., Microscopy of Semiconducting Materials 1989, Proceedings of the Physics Conference held at Oxford University, 10–13 April 1989, ed. by Cullis A. G. and Hutchison J. L. , Institute of Physics Conference Series Number 100, Bristol and New York, 1989.

3. [1] See other paper by these authors this volume. Same reference number

4. [4] R. Anderson , et al., Proceeding MAS 1995 Annual Meeting, Ed. Etz E. , VCR

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