Author:
Current Michael I.,Farrens Shari N.,Fuerfanger Martin,Kang Sien,Kirk Harry R.,Malik Igor J.,Feng Lucia,Henley Francois J.
Abstract
ABSTRACTAn innovative suite of layer transfer technologies, collectively called the NanoCleaveTM Process, includes a non-porous cleave plane utilizing a compressive strain layer, growth of a high purity, crystalline device layer, plasma activation coupled with vacuum bonding, room-temperature cleaving along an atomically flat plane and a variety of post-cleave CVD processes to thicken or thin the device layer to a desired final thickness is described. Applications of this process include fabrication of SOI wafers containing Si and SiGe alloy device layers.
Publisher
Springer Science and Business Media LLC
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