Author:
Torchynska T.,Polupan G.,Khomenkova L.,Slaoui A.
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science
Reference29 articles.
1. V.I. Belyi, L.L. Vasilyeva, R. Gennann, A.S. Ginovker, V.A. Gritsenko, S.M. Repinsky, S.P. Sinitsa, T.P. Smirnova, and F.L. Edelman. In Silicon Nitride in Electronics, Materials Science Monographs, edited by V.I. Belyi (Elsevier Science Ltd, Amsterdam, 1988), vol. 34.
2. L. Pavesi and D.J. Lockwood, Silicon Photonics (Springer-Verlag, Berlin, 2004), 398 p.
3. G.Y. Sung, N.M. Park, J.H. Shin, K.H. Kim, T.Y. Kim, K.S. Cho, and C. Huh: Physics and device structures of highly efficient silicon quantum dots based silicon nitride light-emitting diodes. IEEE J. Sel. Top. Quantum Electron. 12, 1545 (2006).
4. M. Wolkin, J. Jorne, P. Fauchet, G. Allan, and C. Delerue: Electronic states and luminescence in porous silicon quantum dots: the role of oxygen. Phys. Rev. Lett. 82, 197 (1999).
5. N.M. Park, C.J. Choi, T.Y. Seong, and S.J. Park: Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride. Phys. Rev. Lett. 86, 1355 (2001).
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献