Modification of Light Emission in Si-Rich Silicon Nitride Films Versus Stoichiometry and Excitation Light Energy-Reference-Cited by-同舟云学术

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Modification of Light Emission in Si-Rich Silicon Nitride Films Versus Stoichiometry and Excitation Light Energy

Published:2018-04-10 Issue:7 Volume:47 Page:3927-3933
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Torchynska T.,Khomenkova L.,Slaoui A.

Funder

Secretaría de Investigación y Posgrado, Instituto Politécnico Nacional

Concejo Nacional de Ciencias y Tecnologías”, CONACYT, Mexico

National Academy of Sciences of Ukraine

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/article/10.1007/s11664-018-6271-0/fulltext.html

Reference40 articles.

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2. G.Y. Sung, N.M. Park, J.H. Shin, K.H. Kim, T.Y. Kim, K.S. Cho, and C. Huh, IEEE J. Sel. Top. Quant. Elect. 12, 1545 (2006).

3. N.M. Park, C.J. Choi, T.Y. Seong, and S.J. Park, Phys. Rev. Lett. 86, 1355 (2001).

4. L. Dal Negro, J.H. Yi, V. Nguyen, Y. Yi, J. Michel, and L.C. Kimerling, Appl. Phys. Lett. 86, 261905 (2005).

5. T.V. Torchynska, J.L. Casas, E. Espinola, L.V. Hernandez, F.D. Khomenkova, and A. Slaoui, Thin Solid Films 581, 65 (2015).

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