Optical Properties of InAs/InP Planar Quantum Dot Microcavities

Abstract

ABSTRACTPlanar InAs/InP quantum dot microcavities using multi-layer SiO2/Ta2O5 Bragg reflectors have been studied in emission. The spectra exhibit collection optics-limited cavity linewidths of ∼1meV with the occasional ∼200μeV single-dot emission. Measurements as a function of incident power show quantum dot saturation behavior, with transfer of oscillator strength to the wetting layer outside the cavity stop band. Saturation behavior at fixed pump power is also observed as a function of decreasing temperature. Dispersion measurements as a function of emission angle show polarization splitting in qualitative agreement with theory.