Author:
Schäffler F.,AG Daimler-Benz
Abstract
ABSTRACTAn overview of SiGe-based, modulation doped heterostructures is given. Strained layer handling, a prerequisite for realizing both n- and p-type devices, Is treated in terms of band engineering. The main emphasis is put on recent results obtained with high-electron mobility n-type Si/SiGe structures. Hall, Shubnikov-deHaas, and cyclotron resonance measurements are presented. The thermal stability of the heterostructures and the dopant distribution are treated with respect to device applications. Room temperature and 77K dc-measurements on very recent modulation doped field effect transistor (MODFET) implementations using implanted source/drain contacts are discussed. Device concepts with n- and p-type MODFETs combined in a superior complementary layout (CMODFET) are proposed.
Publisher
Springer Science and Business Media LLC
Reference19 articles.
1. Operating CMOS after a Si-MBE process: a precondition for future three-dimensional circuits
2. [18] Schäffler F. , Herzog H. -J. , Jorke H. , and Kasper E. , J. Vac. Sci. Technol. 1991 (in the press)
3. [17] König U. and Schäffler F. , Electronics Lett, (to be published)
4. Enhancement- and depletion-mode p-channel GexSi1-xmodulation-doped FET's
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