Point and planar defect formation in SiC during PVT growth

Abstract

ABSTRACTThe spontaneous nucleation of “negative” crystals from the solute of vacancies in SiC does not appear to be dominant due to the low super-saturation of vacancies. However, clustering of the vacancies is possible due to the energy gain in the system caused by coalescence of any two vacancies. The major reasons for point and planar defect formation in SiC are the liquid phase of free silicon and non-stoichiometry of the vapor.