Formation of Multilayer SiO2- SiOx Heterostructures by Control of Reaction Pathways in Remote PECVD

Abstract

AbstractWe have deposited thin films of silicon dioxide, SiO2, and amorphous silicon, a- Si, by remote Plasma-Enhanced Chemical-Vapor Deposition (Remote PECVD), and have extended this process to the deposition of silicon suboxides, SiOx, 0<x<2. Heterostructures, comprised of alternating layers of SiO 2, and SiOx, x∼1, have been deposited by electronically controlling the flow of charged particles from the plasmageneration region into the deposition chamber, without interrupting the flow of process gases. We discuss the electrical properties of these heterojunction structures.