Evidence for the occurrence of subcutaneous oxidation during low temperature remote plasma enhanced deposition of silicon dioxide films-Reference-Cited by-同舟云学术

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Evidence for the occurrence of subcutaneous oxidation during low temperature remote plasma enhanced deposition of silicon dioxide films

Published:1989-05 Issue:3 Volume:7 Page:576-580
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Fountain G. G.,Hattangady S. V.,Rudder R. A.,Markunas R. J.,Lucovsky G.,Kim S. S.,Tsu D. V.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.575892

Cited by 55 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO[sub 2] Thin Films;Journal of The Electrochemical Society;2011

2. Functionalized interfaces by plasma treatments on silicon and silicon dioxide substrates;Thin Solid Films;2007-06

3. Nanoscale Germanium MOS Dielectrics and Junctions;Germanium-Based Technologies;2007

4. Low-temperature preparation of GaN-SiO2 interfaces with low defect density. I. Two-step remote plasma-assisted oxidation-deposition process;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2004-11

5. PASSIVATION INVESTIGATIONS OF GaAs (100) SURFACE;Physics and Technology of Thin Films;2004-06

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