Author:
Komiya Tohru,Kamo Akira,Kujirai Hiroshi,Shimizut Isamu,Hanna Jun-Ichi
Abstract
AbstractThe novel technique for the preparation of crystalline Si thin films termed “Spontaneous Chemical Deposition” has been proposed, in which silane decomposes spontaneously by gas phase reactions with fluorine at reduced pressure. The technique provided us the crystalline films in a wide range of the preparation conditions by a choice of the external parameters for the reactions. The films exhibited unique characteristics in the chemical structure and the optical and electrical properties, different from the conventional uc-Si:H thin films by the silane plasma processes.The technique have been successfully applied for the homoepitaxial growth of Si thin films.
Publisher
Springer Science and Business Media LLC
Cited by
9 articles.
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