Author:
Roditi E.,Iliadis A.A.,Christou A.
Abstract
AbstractInP field-effect transistors fabricated with an amorphous hydrogenated Si (a-Si:H) gate resulted in metal-insulator-like FET characteristics with no observable current drift and a transconductance of 30–38 mS/mm. The high stability of this gate system is attributed to the low temperature of deposition and the hydrogen passivation of the InP surface.
Publisher
Springer Science and Business Media LLC