Abstract
ABSTRACTIn this paper the state-of-the-art in the use of dry etching for the fabrication of optoelectronic devices will be briefly reviewed, and to a lesser extent, the use of impurity-induced-disordering in these same structures will be discussed. In both instances, the author will rely heavily upon results from his own laboratory. This is being done in the interest of saving time and effort, although clearly at the risk of omitting some very important contributions from many others.
Publisher
Springer Science and Business Media LLC
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献