Ion Implanted Strip Optical Waveguides in GaAs/GaAl as MQW Material

Abstract

ABSTRACTThis paper is the first report of the use of Si+ implantation into GaAs/GaAlAs MQW material to form optical waveguides operating at a wavelength of 1.15μm. Lateral confinement is achieved by mixing of the MQW material which is produced by the implantation of Si+ and subsequent annealing at 750°C. The properties of these waveguides are compared with those of chemically etched rib waveguides and are shown to have reasonably low losses.