Optical Waveguides in GaAs/AlGaAs MQW Structures Formed by Silicon Induced Quantum Well Mixing

Abstract

ABSTRACTSi implantation followed by furnace annealing has been used to produce the mixing of GaAs/AlGaAs multiquantum well (MQW) structures grown by MOVPE. Masked implants have been used to fabricate stripe optical waveguides. Results are presented here for the effect of the ion dose and the annealing time and it is shown that complete mixing occurs for a 1015 cm−2 dose of 500 keV Si+ after annealing at 750 °C for two hours. Waveguides fabricated using this process showed a minimum TE mode propagation loss of 33 dB cm−1 at a wavelength of 1.15 μm.