Author:
Bøttiger J.,Baglin J. E. E.,Brusic V.,Clark G. J.,Anfiteatro D.
Abstract
ABSTRACTThe influence of electron and ion irradiation on the adhesion at chromium-copper thin film interfaces has been studied. The measurements were carried out with different types and thicknesses of well-characterized oxides at the interfaces. The electron energies were varied between 5 and 10 keV, with doses up to 1018cm−2. lons of He+Ne+and P+were used in the range of energies between 150 keVand 1.0 MeV, with fluences ranging from 1015cm−2to 6× 1016cm−2. Substantial improvement of the adhesion is observed in cases where the beam has a significant nuclear stopping power component. Electronic processes may also play a role in improving adhesion, although they are not dominant in the case of the present films.
Publisher
Springer Science and Business Media LLC
Reference5 articles.
1. 3. Ziegler J. , Biersack J. and Littmark U. (to be published).
2. 2. Tombrello T. A. , Proc. 6th Int. Conf. on Ion Beam Analysis Tempe, Arizona May 23–27, 1983 also Nucl. Inst. Meths. (to be published).
3. Ion-beam-enhanced adhesion in the electronic stopping region
4. 4. Wielunski L. S. , Lien C-D. , Liu B-X and Nicolet M-A. , Proc. Materials Research Society, Vol. 7, North Holland, N.Y., 1982, p. 139.
5. 5. Sundqvist B. (private communication).
Cited by
6 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献