Stress engineering with AlN/GaN superlattices for epitaxial GaN on 200 mm silicon substrates using a single wafer rotating disk MOCVD reactor-Reference-Cited by-同舟云学术

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Stress engineering with AlN/GaN superlattices for epitaxial GaN on 200 mm silicon substrates using a single wafer rotating disk MOCVD reactor

Published:2015-08-07 Issue:19 Volume:30 Page:2846-2858
ISSN:0884-2914
Container-title:Journal of Materials Research
language:en
Short-container-title:J. Mater. Res.

Author:

Su Jie,Armour Eric A.,Krishnan Balakrishnan,Lee Soo Min,Papasouliotis George D.

Abstract

Abstract

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference82 articles.

1. Improved Characteristics of Blue and Green InGaN-Based Light-Emitting Diodes on Si Grown by Metalorganic Chemical Vapor Deposition

2. Metal organic chemical vapor deposition of crack-free GaN-based light emitting diodes on Si (111) using a thin Al2O3 interlayer

3. High quality GaN grown on silicon(111) using a SixNy interlayer by metal-organic vapor phase epitaxy

4. Effect of an Al pre-seeded AlN buffer on GaN films grown on Si (111) substrates by using SiC intermediate layers;Kwon;J. Korean Phys. Soc.,2002

5. High quality GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia

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1. Investigation of the Dislocation Behavior of 6- and 8-Inch AlGaN/GaN HEMT Structures with a Thin AlGaN Buffer Layer Grown on Si Substrates;Inorganics;2024-07-30

2. Structural, optical, and electrical characterization and performance comparison of AlGaN/GaN HEMT structures with different buffer layers;Vacuum;2024-01

3. Optimization of Doping Concentration to Obtain High Internal Quantum Efficiency and Wavelength Stability in An InGaN/GaN Blue Light-Emitting Diode;ECS Journal of Solid State Science and Technology;2023-07-01

4. Design of step-graded AlGaN buffers for GaN-on-Si heterostructures grown by MOCVD;Semiconductor Science and Technology;2023-02-22

5. Effects of AlN/GaN superlattice buffer layer on performances of AlGaN/GaN HEMT grown on silicon for sub-6 GHz applications;Semiconductor Science and Technology;2022-12-29

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