Selective area epitaxy of magnesium oxide thin films on gallium nitride surfaces-Reference-Cited by-同舟云学术

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Selective area epitaxy of magnesium oxide thin films on gallium nitride surfaces

Published:2015-11-12 Issue:1 Volume:31 Page:36-45
ISSN:0884-2914
Container-title:Journal of Materials Research
language:en
Short-container-title:J. Mater. Res.

Author:

Losego Mark D.,Paisley Elizabeth A.,Craft H. Spalding,Lam Peter G.,Sachet Edward,Mita Seiji,Collazo Ramon,Sitar Zlatko,Maria Jon-Paul

Abstract

Abstract

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference55 articles.

1. Epitaxial growth of the metastable phase ytterbium monoxide on gallium nitride surfaces

2. Cleaning of AlN and GaN surfaces

3. Selective deposition of polycrystalline silicon thin films at low temperature by hot‐wire chemical vapor deposition

4. Preparation and characterization of atomically clean, stoichiometric surfaces ofn- andp-type GaN(0001)

5. Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy

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1. Tri-phase photonic crystal emitter for thermophotovoltaic systems;Applied Physics Letters;2023-09-25

2. Simple Low-Temperature GaN/Diamond Bonding Process with an Atomically Thin Intermediate Layer;ACS Applied Nano Materials;2023-07-25

3. Resonant tunneling light emitting diode based on rock-salt ZnO/MgO multiple quantum well;Optical Materials;2022-12

4. Magnesium β-ketoiminates as CVD precursors for MgO formation;RSC Advances;2018

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