A New, Ultrafast Technique for Mapping Dislocation Density in Large-area, Single-crystal and Multicrystalline Si Wafers

Abstract

AbstractWe describe a new technique for rapidly measuring average dislocation density and for mapping dislocation distribution of crystalline and multicrystalline silicon wafers. The wafer is etched in Sopori etch and the light scattered by dislocation etch pits is used to statistically count the pits. We also describe a unique arrangement for wafer illumination and measurement of scattered light that allows each dislocation map to be generated very rapidly—typically in less than 20 ms. The measurement system is now commercially available and has capabilities for measuring many other physical parameters of wafers and solar cells