Rapid dislocation-density mapping of as-cut crystalline silicon wafers-Reference-Cited by-同舟云学术

Rapid dislocation-density mapping of as-cut crystalline silicon wafers

Published:2013-10-02 Issue:12 Volume:7 Page:1041-1044
ISSN:1862-6254
Container-title:physica status solidi (RRL) - Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Needleman David Berney,Choi Hyunjoo,Powell Douglas M.,Buonassisi Tonio

Funder

U.S. Department of Energy

National Research Foundation of Korea funded by the Korean Government

Department of Defense (DoD) through the National Defense Science & Engineering Graduate Fellowship (NDSEG) program

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssr.201308150/fullpdf

Reference16 articles.

1. H. Alexander H. Teichler in: Electronic Structures and Properties of Semiconductors, edited by K. A. Jackson and W. Schröter, Handbook of Semiconductor Technology, Vol. 1 (John Wiley & Sons, Weinheim, 2000), chap. 6.

2. Modeling the effect of dislocations on the minority carrier diffusion length of a semiconductor

3. Silicon solar-cell processing for minimizing the influence of impurities and defects

4. Grain control in directional solidification of photovoltaic silicon

5. Seed-assisted cast quasi-single crystalline silicon for photovoltaic application: Towards high efficiency and low cost silicon solar cells

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