Growth Kinetics for Propagation of Si-Network

Abstract

ABSTRACTChemical reactions were systematically investigated with regard to the propagation of Si-network in the vicinity of the growing surface by using various precursors, SiHn, SiHnFm, and SiHnCim (n+m≤3) generated by plasma-induced decomposition of SiH4, SiF4, SiH2Cl2 and SiHCl3. Atomic hydrogen was an effective agent to promote the propagation reaction due to its strong chemical affinity for silicon and its ability to diffuse through the Si-network. A preliminary analysis was made of the kinetics of the propagation reactions.