Author:
Andrushin Sergey Ya.,Balagurov Leonid A.,Bayliss Sue C.,Liberova Galina V.,Petrova Elena A.,Unal Bayram,Yarkin Dmitrii G.
Abstract
ABSTRACTFormation processes of porous silicon on insulating substrate were studied. It was demonstrated that both electrochemical and chemical formation methods allow to transform heavily doped p-type polycrystalline silicon into homogeneous porous silicon. Porous silicon was successfully used as sacrificial layer in the fabrication process of microbridge structures.
Publisher
Springer Science and Business Media LLC