Evidence for Different Kinds of Dangling Bond Defects in a-Si:H

Abstract

Comparing the photoconductivity σp of undoped samples with different native defect concentrations we find that light-induced metastable defects decrease the electron lifetime more strongly than the native defects. We discuss the differences between native and metastable dangling bond defects. We find that the constant photocurrent method underestimates the defect concentration in undoped a-Si:H.