Values of capture cross sections of metastable defects in hydrogenated amorphous silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.361082
Reference22 articles.
1. Variation of photoconductivity with doping and optical degradation in hydrogenated amorphous silicon
2. Isolation of Temperature Effects on the Kinetics of Light Induced Defect Generation in a-Si:H
3. Corrections to the constant photoconductivity method for determining defect densities, with application to amorphous silicon
4. Fermi level effects on photoconductivity during optical degradation of amorphous silicon
5. Unique correlation of the Fermi energy with the metastable defect density in amorphous silicon
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Determination of trapping–detrapping events, recombination processes and gap-state parameters by modulated photocurrent measurements on amorphous silicon;Philosophical Magazine;2014-05-15
2. Method for the determination of the capture cross sections of electrons from space-charge-limited conduction in the dark and under illumination in amorphous semiconductors;Applied Physics Letters;2004-07-12
3. Predicted electronic properties of polycrystalline silicon from three-dimensional device modeling combined with defect-pool model;Journal of Applied Physics;2002-09
4. Relaxation of electrons following trapping in the space-charge-limited conduction regime of n + -i-n + hydrogenated amorphous silicon structures;Philosophical Magazine Letters;2002-05
5. Determination of the capture cross sections of electrons in undoped hydrogenated amorphous silicon from the photoconductivity of and space-charge relaxation in n+-i-n+structures; the role of light exposure and annealing;Journal of Physics: Condensed Matter;2001-05-31
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