Excimer Laser Amorphous Silicon Film Crystallization: A Study of Time Resolved Reflectivity Measurements-Reference-Cited by-同舟云学术

Excimer Laser Amorphous Silicon Film Crystallization: A Study of Time Resolved Reflectivity Measurements

Published:1993-01-01 Issue: Volume:297 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Summonte C.,Bianconi M.,Govoni D.

Abstract

Time Resolved Reflectivity during XeCl pulsed laser irradiation of amorphous silicon films deposited on glass was measured. Simulation of the process by a Heat Flow Calculation in which explosive crystallization was not forced to occur, predicts the coexistence of partial bulk nucleation and a traveling molten layer. Optical simulation of Time Resolved Reflectivity was used to critically examine the Heat Flow Calculation results, substantially confirming the existence of a mixture of thermodynamical phases.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference13 articles.

1. Periodically structured amorphous silicon detectors with improved picosecond responsivity

2. Pulsed‐laser crystallization of amorphous silicon layers buried in a crystalline matrix

3. Calorimetric studies of crystallization and relaxation of amorphous Si and Ge prepared by ion implantation

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