Pulsed‐laser crystallization of amorphous silicon layers buried in a crystalline matrix

Author:

Polman A.,Stolk P. A.,Mous D. J. W.,Sinke W. C.,Bulle‐Lieuwma C. W. T.,Vandenhoudt D. E. W.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference40 articles.

1. For a recent overview, see Proceedings of the 7th International Conference on Ion Implantation Technology, edited by T. Takagi, Nucl. Instrum. Methods B37/38(1989); NIMBEU0168-583X

2. Proceedings of the 6th International Conference on Ion Beam Modification of Materials, edited by S. Namba, N. Itoh, and M. Iwaki, Nucl. Instrum. Methods B39(1989).NIMBEU0168-583X

3. Melting Temperature and Explosive Crystallization of Amorphous Silicon during Pulsed Laser Irradiation

4. Evidence for a Self-Propagating Melt in Amorphous Silicon upon Pulsed-Laser Irradiation

5. Explosive recrystallization during pulsed laser irradiation

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