Dependence of Buried CoSi2 Resistivity on ION Implantation and Annealing Conditions1

Abstract

ABSTRACTWe have investigated the dependence of electrical and material properties of buried CoSi2 layers on Co+ implantation and annealing conditions. The results indicated that the electrical resistivity and crystalline quality of the implanted buried CoSi2 layers depend strongly on the implantation temperature. CoSi2 layers with the lowest resistivity and best crystalline quality (Xmin as low as 3.6%) were obtained from samples implanted at 300°C-400°C. Implantation at higher temperatures (e.g., 580°C) produced cobalt disilicide layers with significantly higher electrical resistivity and a Xmin of about 10.7%.