Author:
Theiss Silva K.,Chen D.M.,Golovchenko J.A.
Abstract
ABSTRACTWe have used the tunneling microscope to measure the lattice relaxation of Ge islands on Si (111) as a function of their height. Lattice constants on the top surfaces of individual Ge islands can be measured with an uncertainty of approximately one percent. The lattice constant is a continuous, Monotonically increasing function of island height up to 20 bilayers. At heights around 5O bilayers, the island-top lattice parameter may exceed that of bulk Ge. Defects can be observed penetrating the top surface of islands which have heights around 90 bilayers.
Publisher
Springer Science and Business Media LLC