Author:
Marek T.,Strunk H.P.,Bauser E.,Lu Y.C.
Abstract
ABSTRACTThe observations of the as-solution-grown GaAs (001) vicinal surfaces yield three kinds of Microtopologies. Each of them develops in a certain range of growth temperature. In a low temperature range (492° C…600° C) we observe parallel growth steps with heights of one Monolayer. In a medium range, a network consisting of two sets of growth steps with larger heights is observed. At high growth temperatures (780° C…850° C) we find growth surfaces that are atomically rough. IMplications of these findings for modelling the crystal growth will be discussed.
Publisher
Springer Science and Business Media LLC
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献