The Contribution of Beam Processing to Present and Future Integrated Circuit Technologies

Abstract

ABSTRACTA brief history and present state of beam processing techniques and applications to silicon integrated circuit technology are given. The viability of incorporating pulse-laser controlled doping profiles into the emitter-base structure of an advanced bipolar transistor is discussed. The areas of present I.C. technology which will constrain future device development are identified, and the contribution that beam processing can make in removing these constraints is discussed. The beam processing techniques most likely to be found in future I.C. technologies are described.